Freescale SemiconductorメーカーBlock Guideの使用説明書/サービス説明書
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Block Guide — S12EETX4KV0 V00.04 2 Revision History Frees cale Semiconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.
Block Guide — S12EETX4KV0 V00.04 3 Table of Contents Section 1 Introduction 1.1 Overview. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 1.1.1 Glossary . . . . . . . . . . . . . .
Block Guide — S12EETX4KV0 V00.04 4 4.4 Background Debug Mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 4.5 EEPROM Module Security . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Block Guide — S12EETX4KV0 V00.04 5 List of Figures Figure 1-1 Module Block Diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Figure 3-1 EEPROM Memory Map . . . . . . . . . . . . . . . . . . . . . . . . . .
Block Guide — S12EETX4KV0 V00.04 6 Frees cale Semiconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.
Block Guide — S12EETX4KV0 V00.04 7 List of Tables Table 3-1 EEPROM Configuration Field . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Table 3-2 EEPROM Register Map . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Block Guide — S12EETX4KV0 V00.04 8 Frees cale Semiconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.
Block Guide — S12EETX4KV0 V00.04 9 Frees cale Semiconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.
Block Guide — S12EETX4KV0 V00.04 10 Frees cale Semiconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.
Block Guide — S12EETX4KV0 V00.04 11 Section 1 Introduction 1.1 Overview This document describes the EETX4K module which includes a 4K byte EEPROM (Non-Volatile) memory. The EEPROM memory may be read as either bytes, aligned words or misaligned words.
Block Guide — S12EETX4KV0 V00.04 12 1.4 Block Diagram A block diagram of the EEPROM module is shown in Figure 1-1 . Figure 1-1 Module Block Diagram EETX4K EEPROM 2K * 16 Bits sector 0 sector 1 secto.
Block Guide — S12EETX4KV0 V00.04 13 Section 2 External Signal Description 2.1 Overview The EEPROM module contains no signals that connect off-chip. Frees cale Semiconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.
Block Guide — S12EETX4KV0 V00.04 14 Section 3 Memory Map and Registers 3.1 Overview This section describes the memory map and registers for the EEPROM module.
Block Guide — S12EETX4KV0 V00.04 15 Figure 3-1 EEPROM Memory Map EEPROM Registers ADDRESS OFFSET = $_00 EEPROM Configuration Field ADDRESS OFFSET = $_0B EEPROM BASE + $_000 EEPROM BASE + $_FFF + $_.
Block Guide — S12EETX4KV0 V00.04 16 The EEPROM module also contains a set of 12 control and status registers located between EEPROM register address offsets $_00 and $_0B. A summary of the EEPROM module registers is given in Table 3-2 while their accessibility is detailed in section 3.
Block Guide — S12EETX4KV0 V00.04 17 3.3 Register Descriptions 3.3.1 ECLKDIV — EEPROM Clock Divider Register The ECLKDIV register is used to control timed events in program and erase algorithms. Figure 3-2 EEPROM Clock Divider Register (ECLKDIV) All bits in the ECLKDIV register are readable, bits 6-0 are write once and bit 7 is not writable.
Block Guide — S12EETX4KV0 V00.04 18 3.3.3 RESERVED2 This register is reserved for factory testing and is not accessible. Figure 3-4 RESERVED2 All bits read zero and are not writable. 3.3.4 ECNFG — EEPROM Configuration Register The ECNFG register enables the EEPROM interrupts.
Block Guide — S12EETX4KV0 V00.04 19 3.3.5 EPROT — EEPROM Protection Register The EPROT register defines which EEPROM sectors are protected against program or erase operations. Figure 3-6 EEPROM Protection Register (EPROT) All bits in the EPROT register are readable and writable except for RNV[6:4] which are only readable.
Block Guide — S12EETX4KV0 V00.04 20 3.3.6 ESTAT — EEPROM Status Register The ESTAT register defines the operational status of the module. Figure 3-7 EEPROM Status Register (ESTAT) CBEIF, PVIOL and ACCERR are readable and writable, CCIF and BLANK are readable and not writable, remaining bits read zero and are not writable.
Block Guide — S12EETX4KV0 V00.04 21 The CCIF flag indicates that there are no more commands pending. The CCIF flag is cleared when CBEIF is clear and sets automatically upon completion of all active and pending commands. The CCIF flag does not set when an active commands completes and a pending command is fetched from the command buffer.
Block Guide — S12EETX4KV0 V00.04 22 Figure 3-8 EEPROM Command Register (ECMD) All CMDB bits are readable and writable during a command write sequence while bit 7 reads zero and is not writable. CMDB[6:0] — Valid EEPROM commands are shown in Table 3-4 .
Block Guide — S12EETX4KV0 V00.04 23 3.3.9 EADDR — EEPROM Address Registers The EADDRHI and EADDRLO registers are the EEPROM address registers. Figure 3-10 EEPROM Address High Register (EADDRHI) Figure 3-11 EEPROM Address Low Register (EADDRLO) All EABHI and EABLO bits read zero and are not writable in normal modes.
Block Guide — S12EETX4KV0 V00.04 24 Figure 3-13 EEPROM Data Low Register (EDATALO) All EDHI and EDLO bits read zero and are not writable in normal modes.
Block Guide — S12EETX4KV0 V00.04 25 Section 4 Functional Description 4.1 EEPROM Command Operations Write and read operations are both used for the program, erase, erase verify, sector erase abort, and sector modify algorithms described in this section.
Block Guide — S12EETX4KV0 V00.04 26 then 182kHz. In this case, the EEPROM program and erase algorithm timings are increased over the optimum target by: NOTE: "4"Program and erase command execution time will increase proportionally with the period of EECLK.
Block Guide — S12EETX4KV0 V00.04 27 Figure 4-1 Determination Procedure for PRDIV8 and EDIV Bits PRDIV8=1 yes no PRDIV8=0 (reset) 12.8MHz? EECLK=(PRDCLK)/(1+EDIV[5:0]) PRDCLK=oscillator_clock PRDCLK=.
Block Guide — S12EETX4KV0 V00.04 28 4.1.2 Command Write Sequence The EEPROM command controller is used to supervise the command write sequence to execute program, erase, erase verify, sector erase abort, and sector modify algorithms.
Block Guide — S12EETX4KV0 V00.04 29 NOTE: The user should not program an EEPROM word without first erasing the sector in which that word resides. 4.1.3.1 Erase Verify Command The erase verify operation will verify that the EEPROM memory is erased. An example flow to execute the erase verify operation is shown in Figure 4-2 .
Block Guide — S12EETX4KV0 V00.04 30 Figure 4-2 Example Erase Verify Command Flow 4.1.3.2 Program Command The program operation will program a previously erased word in the EEPROM memory using an embedded algorithm. An example flow to execute the program operation is shown in Figure 4-3 .
Block Guide — S12EETX4KV0 V00.04 31 2. Write the program command, $20, to the ECMD register. 3. Clear the CBEIF flag in the ESTAT register by writing a “1” to CBEIF to launch the program command.
Block Guide — S12EETX4KV0 V00.04 32 Figure 4-3 Example Program Command Flow 4.1.3.3 Sector Erase Command The sector erase operation will erase both words in a sector of EEPROM memory using an embedded algorithm. Write: EEPROM Address Write: ECMD register Program Command $20 Write: EST A T register Clear CBEIF $80 1.
Block Guide — S12EETX4KV0 V00.04 33 An example flow to execute the sector erase operation is shown in Figure 4-4 . The sector erase command write sequence is as follows: 1. Write to an EEPROM memory address to start the command write sequence for the sector erase command.
Block Guide — S12EETX4KV0 V00.04 34 Figure 4-4 Example Sector Erase Command Flow 4.1.3.4 Mass Erase Command The mass erase operation will erase all addresses in an EEPROM block using an embedded algorithm. An example flow to execute the mass erase operation is shown in Figure 4-5 .
Block Guide — S12EETX4KV0 V00.04 35 If the EEPROM memory to be erased contains any protected area, the PVIOL flag in the ESTAT register will set and the mass erase command will not launch.
Block Guide — S12EETX4KV0 V00.04 36 1. Write to any EEPROM memory address to start the command write sequence for the sector erase abort command. The address and data written are ignored. 2. Write the sector erase abort command, $47, to the ECMD register.
Block Guide — S12EETX4KV0 V00.04 37 Figure 4-6 Example Sector Erase Abort Command Flow 4.1.3.6 Sector Modify Command The sector modify operation will erase both words in a sector of EEPROM memory followed by a reprogram of the addressed word using an embedded algorithm.
Block Guide — S12EETX4KV0 V00.04 38 2. Write the sector modify command, $60, to the ECMD register. 3. Clear the CBEIF flag in the ESTAT register by writing a “1” to CBEIF to launch the sector erase command.
Block Guide — S12EETX4KV0 V00.04 39 1. Writing to an EEPROM address before initializing the ECLKDIV register. 2. Writing a byte or misaligned word to a valid EEPROM address. 3. Starting a command write sequence while a sector erase abort operation is active.
Block Guide — S12EETX4KV0 V00.04 40 4.2 Wait Mode If a command is active (CCIF=0) when the MCU enters the WAIT mode, the active command and any buffered command will be completed. The EEPROM module can recover the MCU from WAIT if the CBEIF and CCIF interrupts are enabled (see section 4.
Block Guide — S12EETX4KV0 V00.04 41 BDM status register. This BDM action will cause the MCU to override the Flash security state and the MCU will be unsecured. Once the MCU is unsecured, BDM commands will be enabled and the Flash security byte may be programmed to the unsecure state.
Block Guide — S12EETX4KV0 V00.04 42 Figure 4-8 EEPROM Interrupt Implementation For a detailed description of the register bits, refer to the EEPROM Configuration register and EEPROM Status register sections (see sections 3.3.4 and 3.3.6 respectively).
Block Guide — S12EETX4KV0 V00.04 43 Index –A– ACCERR 21 –B– Background Debug Mode 40 BLANK 21 –C– CBEIE 18 CBEIF 20 CCIE 18 CCIF 20 CMDB 22 Command Write Sequence 11 –E– EDIV 17 EDIV.
Block Guide — S12EETX4KV0 V00.04 44 Frees cale Semiconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.
Block Guide — S12EETX4KV0 V00.04 45 Block Guide End Sheet Frees cale Semiconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.
Block Guide — S12EETX4KV0 V00.04 46 FINAL PAGE OF 46 PAGES Frees cale Semiconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.
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