CypressメーカーCY7C1163V18の使用説明書/サービス説明書
ページ先へ移動 of 29
CY7C1 161V18, CY7C1 176V18 CY7C1 163V18, CY7C1 165V18 18-Mbit QDR™-II+ SRAM 4-W ord Burst Architecture (2.5 Cycle Read Latency) Cypress Semiconductor Corpora tion • 198 Champion Court • San Jose , CA 95134-1709 • 408-943-2600 Document Number: 001-06582 Rev .
CY7C1 161V18, CY7C1 176V18 CY7C1 163V18, CY7C1 165V18 Document Number: 001-06582 Rev . *D Page 2 of 29 Logic Block Diagram (CY7C1 161V18) Logic Block Diagram (CY7C1 176V18) 512K x 8 Array CLK A (18:0) Gen. K K Control Logic Address Register D [7:0] Read Add.
CY7C1 161V18, CY7C1 176V18 CY7C1 163V18, CY7C1 165V18 Document Number: 001-06582 Rev . *D Page 3 of 29 Logic Block Diagram (CY7C1 163V18) Logic Block Diagram (CY7C1 165V18) 256K x 18 Array CLK A (17:0) Gen. K K Control Logic Address Register D [17:0] Read Add.
CY7C1 161V18, CY7C1 176V18 CY7C1 163V18, CY7C1 165V18 Document Number: 001-06582 Rev . *D Page 4 of 29 Pin Configurations CY7C1 161V18 (2M x 8 ) 165-Ball FBGA (13 x 15 x 1.
CY7C1 161V18, CY7C1 176V18 CY7C1 163V18, CY7C1 165V18 Document Number: 001-06582 Rev . *D Page 5 of 29 Pin Configurations (continued) CY7C1 163V18 (1M x 18) 165-Ball FBGA (13 x 15 x 1.
CY7C1 161V18, CY7C1 176V18 CY7C1 163V18, CY7C1 165V18 Document Number: 001-06582 Rev . *D Page 6 of 29 Pin Definitions Pin Name IO Pin Description D [x:0] Input- Synchronous Data Input Signals . Sampled on the rising edge of K and K clocks during valid write operations.
CY7C1 161V18, CY7C1 176V18 CY7C1 163V18, CY7C1 165V18 Document Number: 001-06582 Rev . *D Page 7 of 29 CQ Echo Clock Synchr onous Echo Clo ck Outputs . This is a free running clock and is synchronized to the input clock (K ) of the QDR-II+. The timings fo r the echo clocks are shown in “Switching Characteristics” on page 23.
CY7C1 161V18, CY7C1 176V18 CY7C1 163V18, CY7C1 165V18 Document Number: 001-06582 Rev . *D Page 8 of 29 Functional Overview The CY7C1 161V18, CY7C1 1 76V18, CY7C1 163V18, and CY7C1 165V18 are synch ronous pipelined burst SRAMs equipped with both a read port and a write po rt.
CY7C1 161V18, CY7C1 176V18 CY7C1 163V18, CY7C1 165V18 Document Number: 001-06582 Rev . *D Page 9 of 29 Depth Exp ansio n The CY7C1 163V18 has a port select i nput for each port. This enables easy depth expansion. Both port selects are only sampled on the rising edge of t he positive input cl ock (K).
CY7C1 161V18, CY7C1 176V18 CY7C1 163V18, CY7C1 165V18 Document Number: 001-06582 Rev . *D Page 10 of 29 Application Example Figure 1 shows four QDR-II+ u sed in an a pplication. Figure 1. Appl ic ation Example T ruth T able The truth table for the CY7C1 161V18, CY7C1 176V18, CY7C1 163V18, and CY7C1 165V18 follows.
CY7C1 161V18, CY7C1 176V18 CY7C1 163V18, CY7C1 165V18 Document Number: 001-06582 Rev . *D Page 1 1 of 29 Writ e Cycle Descriptions The write cycle descriptions of CY 7C1 161V18 and CY7C1 163V18 follow .
CY7C1 161V18, CY7C1 176V18 CY7C1 163V18, CY7C1 165V18 Document Number: 001-06582 Rev . *D Page 12 of 29 The write cycle descriptions of CY7C1 165V18 follows.
CY7C1 161V18, CY7C1 176V18 CY7C1 163V18, CY7C1 165V18 Document Number: 001-06582 Rev . *D Page 13 of 29 IEEE 1 149.1 Serial Boundary Scan (JT AG) These SRAMs incorporate a serial boundary scan test access port (T AP) in the FBGA package. This part is fully comp liant with IEEE S tandard 1 149.
CY7C1 161V18, CY7C1 176V18 CY7C1 163V18, CY7C1 165V18 Document Number: 001-06582 Rev . *D Page 14 of 29 IDCODE The IDCODE instruction causes a vendor-specific 32-bit code to be loaded into the instruction register .
CY7C1 161V18, CY7C1 176V18 CY7C1 163V18, CY7C1 165V18 Document Number: 001-06582 Rev . *D Page 15 of 29 T AP Controller S t ate Diagram Figure 2. T ap Controll er St ate Diagram [12] TEST -LOGIC RESET.
CY7C1 161V18, CY7C1 176V18 CY7C1 163V18, CY7C1 165V18 Document Number: 001-06582 Rev . *D Page 16 of 29 T AP Controller Block Diagram Figure 3. T a p Controller Block Diagram T AP Electrical Characteristics The T ap Electrical Characteristics t able over the operating range follows.
CY7C1 161V18, CY7C1 176V18 CY7C1 163V18, CY7C1 165V18 Document Number: 001-06582 Rev . *D Page 17 of 29 T AP AC Switchi ng Characteristics The T ap AC Switching Characteristi cs over the operating range follows.
CY7C1 161V18, CY7C1 176V18 CY7C1 163V18, CY7C1 165V18 Document Number: 001-06582 Rev . *D Page 18 of 29 Identification Regi ster Definitions Instruction Field Va l u e Description CY7C1 161V18 CY7C1 176V18 CY7C1 163V18 CY7C 1 165V18 Revision Number (31:29) 000 000 000 000 V ersion numb er .
CY7C1 161V18, CY7C1 176V18 CY7C1 163V18, CY7C1 165V18 Document Number: 001-06582 Rev . *D Page 19 of 29 Boundary Scan Order Bit # Bump ID Bit # Bump ID Bit # Bump ID Bit # Bump ID 0 6R 27 1 1H 54 7B 8.
CY7C1 161V18, CY7C1 176V18 CY7C1 163V18, CY7C1 165V18 Document Number: 001-06582 Rev . *D Page 20 of 29 Power Up Sequence in QDR-II+ SRA During power up, when the DOF F is tied HIGH, the DLL gets locked after 2048 cycles of st ab le clock. QDR-II+ SRAMs must be powered up and initialized in a predefin ed manner to prevent undefined operations.
CY7C1 161V18, CY7C1 176V18 CY7C1 163V18, CY7C1 165V18 Document Number: 001-06582 Rev . *D Page 21 of 29 Maximum Ratin gs Exceeding maximum ratings may impair the useful life of the device. User gui d el i ne s are not tested. S torage T emperature ...
CY7C1 161V18, CY7C1 176V18 CY7C1 163V18, CY7C1 165V18 Document Number: 001-06582 Rev . *D Page 22 of 29 Cap acit ance T ested initiall y and after an y design or proc ess change that may affect these parameters. Parameter Descriptio n T est Conditions Max Unit C IN Input Capacitance T A = 25 ° C, f = 1 MHz, V DD = 1.
CY7C1 161V18, CY7C1 176V18 CY7C1 163V18, CY7C1 165V18 Document Number: 001-06582 Rev . *D Page 23 of 29 Switching Characteristics Over the operating range [23, 24] Cypress Parameter Consortium Paramet.
CY7C1 161V18, CY7C1 176V18 CY7C1 163V18, CY7C1 165V18 Document Number: 001-06582 Rev . *D Page 24 of 29 DLL Timing t KC V ar t KC V ar Clock Phase Jitter – 0.
CY7C1 161V18, CY7C1 176V18 CY7C1 163V18, CY7C1 165V18 Document Number: 001-06582 Rev . *D Page 25 of 29 Switching W aveforms Read/Write/Deselect Sequence Figure 6.
CY7C1 161V18, CY7C1 176V18 CY7C1 163V18, CY7C1 165V18 Document Number: 001-06582 Rev . *D Page 26 of 29 Ordering Information Not all of the speed, package and tempera ture ranges are avai lab le. Contact your local sales representative or visit www .cypress.
CY7C1 161V18, CY7C1 176V18 CY7C1 163V18, CY7C1 165V18 Document Number: 001-06582 Rev . *D Page 27 of 29 333 CY7C1 161V18-333BZC 51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Commercial CY7C1 176V18-333BZC CY7C1 163V18-333BZC CY7C1 165V18-333BZC CY7C1 161V18-333BZXC 51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.
CY7C1 161V18, CY7C1 176V18 CY7C1 163V18, CY7C1 165V18 Document Number: 001-06582 Rev . *D Page 28 of 29 Package Diagram Figure 7. 165-Ball FBGA (13 x 15 x 1.4 mm), 51-8 5180 A 1 PIN 1 CORNER 15.00±0.10 13.00±0.10 7.00 1.00 Ø0.50 (165X) Ø0.25 M C A B Ø0.
Document Number: 001-06582 Rev . *D Revised March 06, 2008 Page 29 of 29 QDR™ is a trademark of Cypress Semicond uctor Corp. QDR RAMs and Quad Data Rate RAMs comprise a new family of prod ucts developed by Cypress, IDT , NEC, Renesas, and Samsung.
デバイスCypress CY7C1163V18の購入後に(又は購入する前であっても)重要なポイントは、説明書をよく読むことです。その単純な理由はいくつかあります:
Cypress CY7C1163V18をまだ購入していないなら、この製品の基本情報を理解する良い機会です。まずは上にある説明書の最初のページをご覧ください。そこにはCypress CY7C1163V18の技術情報の概要が記載されているはずです。デバイスがあなたのニーズを満たすかどうかは、ここで確認しましょう。Cypress CY7C1163V18の取扱説明書の次のページをよく読むことにより、製品の全機能やその取り扱いに関する情報を知ることができます。Cypress CY7C1163V18で得られた情報は、きっとあなたの購入の決断を手助けしてくれることでしょう。
Cypress CY7C1163V18を既にお持ちだが、まだ読んでいない場合は、上記の理由によりそれを行うべきです。そうすることにより機能を適切に使用しているか、又はCypress CY7C1163V18の不適切な取り扱いによりその寿命を短くする危険を犯していないかどうかを知ることができます。
ですが、ユーザガイドが果たす重要な役割の一つは、Cypress CY7C1163V18に関する問題の解決を支援することです。そこにはほとんどの場合、トラブルシューティング、すなわちCypress CY7C1163V18デバイスで最もよく起こりうる故障・不良とそれらの対処法についてのアドバイスを見つけることができるはずです。たとえ問題を解決できなかった場合でも、説明書にはカスタマー・サービスセンター又は最寄りのサービスセンターへの問い合わせ先等、次の対処法についての指示があるはずです。