CypressメーカーCY7C1256V18の使用説明書/サービス説明書
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CY7C1241V18, CY7C1256V18 CY7C1243V18, CY7C1245V18 36-Mbit QDR™-II+ SRAM 4-W ord Burst Architecture (2.0 Cycle Read Latency) Cypress Semiconductor Corpora tion • 198 Champion Court • San Jose , CA 95134-1709 • 408-943-2600 Document Number: 001-06365 Rev .
CY7C1241V18, CY7C1256V18 CY7C1243V18, CY7C1245V18 Document Number: 001-06365 Rev . *D Page 2 of 28 Logic Block Diagram (CY7C1241V18) Logic Block Diagram (CY7C1256V18) 1M x 8 Array CLK A (19:0) Gen. K K Control Logic Address Register D [7:0] Read Add. Decode Read Data Reg.
CY7C1241V18, CY7C1256V18 CY7C1243V18, CY7C1245V18 Document Number: 001-06365 Rev . *D Page 3 of 28 Logic Block Diagram (CY7C1243V18) Logic Block Diagram (CY7C1245V18) 512K x 18 Array CLK A (18:0) Gen. K K Control Logic Address Register D [17:0] Read Add.
CY7C1241V18, CY7C1256V18 CY7C1243V18, CY7C1245V18 Document Number: 001-06365 Rev . *D Page 4 of 28 Pin Configurations CY7C1241V18 ( 4M x 8) 165-Ball FBGA (15 x 17 x 1.
CY7C1241V18, CY7C1256V18 CY7C1243V18, CY7C1245V18 Document Number: 001-06365 Rev . *D Page 5 of 28 Pin Configurations (continued) CY7C1243V18 ( 2M x 18) 165-Ball FBGA (15 x 17 x 1.
CY7C1241V18, CY7C1256V18 CY7C1243V18, CY7C1245V18 Document Number: 001-06365 Rev . *D Page 6 of 28 Pin Definitions Pin Name IO Pin Description D [x:0] Input- Synchronous Data Input Signals . Sampled on the rising edge of K and K clocks during valid write operations.
CY7C1241V18, CY7C1256V18 CY7C1243V18, CY7C1245V18 Document Number: 001-06365 Rev . *D Page 7 of 28 CQ Echo Clock Synchronou s Ec ho Clock Outpu ts . This is a free running clock and is synchronized to the input clock (K) of the QD R-II+. The timing for the echo clocks is shown in “Switching Character- istics” on page 23 .
CY7C1241V18, CY7C1256V18 CY7C1243V18, CY7C1245V18 Document Number: 001-06365 Rev . *D Page 8 of 28 Functional Overview The CY7C1241V18, CY7C1256 V18, CY7C1243V18, and CY7C1245V18 are synch ronous pipelined Burst SRAMs equipped with a rea d and a write port.
CY7C1241V18, CY7C1256V18 CY7C1243V18, CY7C1245V18 Document Number: 001-06365 Rev . *D Page 9 of 28 Depth Exp ansion The CY7C1243V18 has a Po rt Select input for each port. T his enables easy depth expansion. Both Port Selects are sampled on the rising edge of the Positive Input Clock only (K).
CY7C1241V18, CY7C1256V18 CY7C1243V18, CY7C1245V18 Document Number: 001-06365 Rev . *D Page 10 of 28 Application Example Figure 1 shows the use of 4 QDR-II+ SRAMs in an application. Figure 1. Appl ic ation Example T ruth T able The truth table for the CY7C1241V18, CY7C1256V 18, CY7C1243V1 8, and CY7C1 245V18 follows.
CY7C1241V18, CY7C1256V18 CY7C1243V18, CY7C1245V18 Document Number: 001-06365 Rev . *D Page 1 1 of 28 Write Cycle Descriptions The write cycle description table for CY7C1241V18 and CY7C1243V18 follows.
CY7C1241V18, CY7C1256V18 CY7C1243V18, CY7C1245V18 Document Number: 001-06365 Rev . *D Page 12 of 28 Write Cycle Descriptions The write cycle description ta ble for CY7C1245V18 follows.
CY7C1241V18, CY7C1256V18 CY7C1243V18, CY7C1245V18 Document Number: 001-06365 Rev . *D Page 13 of 28 IEEE 1 149.1 Serial Boundary Scan (JT AG) These SRAMs incorporate a serial boundary scan test access port (T AP) in the FBGA package. This part is fully compliant with IEEE S tandard #1 149.
CY7C1241V18, CY7C1256V18 CY7C1243V18, CY7C1245V18 Document Number: 001-06365 Rev . *D Page 14 of 28 IDCODE The IDCODE instruction loads a vendor-sp ecific, 32-bit code into the instruction register .
CY7C1241V18, CY7C1256V18 CY7C1243V18, CY7C1245V18 Document Number: 001-06365 Rev . *D Page 15 of 28 T AP Controller St ate Diagram The state diagram for the CY7C124 1V18, CY7C1256V18, CY7C1243V18, and CY7C1245V18 follo ws.
CY7C1241V18, CY7C1256V18 CY7C1243V18, CY7C1245V18 Document Number: 001-06365 Rev . *D Page 16 of 28 T AP Controller Block Diagram T AP Electrical Ch aracteristics Over the Operating Range [12, 13, 14 ] Parameter Descriptio n T est Conditions Min Max Unit V OH1 Output HIGH V oltage I OH = − 2.
CY7C1241V18, CY7C1256V18 CY7C1243V18, CY7C1245V18 Document Number: 001-06365 Rev . *D Page 17 of 28 T AP AC Switchi ng Characteristics Over the Operating Range [15, 16 ] Parameter Descriptio n Min Max.
CY7C1241V18, CY7C1256V18 CY7C1243V18, CY7C1245V18 Document Number: 001-06365 Rev . *D Page 18 of 28 Identification Register Definitions Instruction Field Va l u e Description CY7C1241V18 CY7C1256V18 CY7C1 243V18 CY7C1245V18 Revision Number (31:29) 000 000 000 0 00 V ersion numb er .
CY7C1241V18, CY7C1256V18 CY7C1243V18, CY7C1245V18 Document Number: 001-06365 Rev . *D Page 19 of 28 Boundary Scan Order Bit # Bump ID Bit # Bump ID Bit # Bump ID Bit # Bump ID 0 6R 28 10G 56 6A 84 1J .
CY7C1241V18, CY7C1256V18 CY7C1243V18, CY7C1245V18 Document Number: 001-06365 Rev . *D Page 20 of 28 Power Up Sequence in QDR-II+ SRAM QDR-II+ SRAMs must be powered up and ini tialized in a predefined manner to prevent undefined opera tions. During power up, when the DOFF is tied HIGH, the DLL is locked after 2048 cycles of stable clock.
CY7C1241V18, CY7C1256V18 CY7C1243V18, CY7C1245V18 Document Number: 001-06365 Rev . *D Page 21 of 28 Maximum Ratings Exceeding maximum ratings may shorten the useful life of the device. User gui d el i ne s are not tested. S t orage T emperature ......
CY7C1241V18, CY7C1256V18 CY7C1243V18, CY7C1245V18 Document Number: 001-06365 Rev . *D Page 22 of 28 Cap acita nce T ested initially and after any design or proc ess change that may affect these parameters. Parameter Descriptio n T est Conditions Max Unit C IN Input Capacitance T A = 25 ° C, f = 1 MHz, V DD = 1.
CY7C1241V18, CY7C1256V18 CY7C1243V18, CY7C1245V18 Document Number: 001-06365 Rev . *D Page 23 of 28 Switching Characteristics Over the Operating Range [22, 23] Cypress Parameter Consortium Parameter D.
CY7C1241V18, CY7C1256V18 CY7C1243V18, CY7C1245V18 Document Number: 001-06365 Rev . *D Page 24 of 28 Switching W aveforms Figure 4. Read/Write/Deselect Sequence wave form for 2.
CY7C1241V18, CY7C1256V18 CY7C1243V18, CY7C1245V18 Document Number: 001-06365 Rev . *D Page 25 of 28 Ordering Information Not all of the speed, package and temperat ure ranges are avail able. Please contact your local sales representative or visit www .
CY7C1241V18, CY7C1256V18 CY7C1243V18, CY7C1245V18 Document Number: 001-06365 Rev . *D Page 26 of 28 300 CY7C1241V18-300 BZC 51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.4 mm) Commercial CY7C1256V18-300BZC CY7C1243V18-300BZC CY7C1245V18-300BZC CY7C1241V18-300BZXC 51-85195 165-ball Fine Pitch Ball Grid Array (15 x 17 x 1.
CY7C1241V18, CY7C1256V18 CY7C1243V18, CY7C1245V18 Document Number: 001-06365 Rev . *D Page 27 of 28 Package Diagram Figure 5. 165-ball FBGA (15 x 17 x 1.
Document Number: 001-06365 Rev . *D Revised March 12, 2008 Page 28 of 28 QDR™ is a trademark of Cypress Semicond uctor Corp. QDR RAMs and Quad Data Rate RAMs comprise a new family of prod ucts developed by Cypress, IDT , NEC, Renesas, and Sam sung.
デバイスCypress CY7C1256V18の購入後に（又は購入する前であっても）重要なポイントは、説明書をよく読むことです。その単純な理由はいくつかあります：
Cypress CY7C1256V18をまだ購入していないなら、この製品の基本情報を理解する良い機会です。まずは上にある説明書の最初のページをご覧ください。そこにはCypress CY7C1256V18の技術情報の概要が記載されているはずです。デバイスがあなたのニーズを満たすかどうかは、ここで確認しましょう。Cypress CY7C1256V18の取扱説明書の次のページをよく読むことにより、製品の全機能やその取り扱いに関する情報を知ることができます。Cypress CY7C1256V18で得られた情報は、きっとあなたの購入の決断を手助けしてくれることでしょう。
Cypress CY7C1256V18を既にお持ちだが、まだ読んでいない場合は、上記の理由によりそれを行うべきです。そうすることにより機能を適切に使用しているか、又はCypress CY7C1256V18の不適切な取り扱いによりその寿命を短くする危険を犯していないかどうかを知ることができます。
ですが、ユーザガイドが果たす重要な役割の一つは、Cypress CY7C1256V18に関する問題の解決を支援することです。そこにはほとんどの場合、トラブルシューティング、すなわちCypress CY7C1256V18デバイスで最もよく起こりうる故障・不良とそれらの対処法についてのアドバイスを見つけることができるはずです。たとえ問題を解決できなかった場合でも、説明書にはカスタマー・サービスセンター又は最寄りのサービスセンターへの問い合わせ先等、次の対処法についての指示があるはずです。
