Cypress SemiconductorメーカーCY7C1316JV18の使用説明書/サービス説明書
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18-Mbit DDR-II SRAM 2-W ord Burst Architecture CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 Cypress Semiconductor Corpora tion • 198 Champion Court • San Jose , CA 95134-1709 • 408-943-2600 Document Number: 001-15271 Rev .
CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 Document Number: 001-15271 Rev . *B Page 2 of 26 Logic Block Diagram (CY7C1316JV18) Logic Block Diagram (CY7C1916JV18) Wri te Reg Wri te Reg CLK A (19:0) Gen. K K Control Logic Address Register Read Add.
CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 Document Number: 001-15271 Rev . *B Page 3 of 26 Logic Block Diagram (CY7C1318JV18) Logic Block Diagram (CY7C1320JV18) Wri te Reg Wri te Reg CLK A (19:0) Gen. K K Control Logic Address Register Read Add.
CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 Document Number: 001-15271 Rev . *B Page 4 of 26 Pin Configuration The pin configuration for CY7C1316JV18, CY7C1318 JV18, and CY7C1320JV18 follow .
CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 Document Number: 001-15271 Rev . *B Page 5 of 26 CY7C1318JV18 (1 M x 18) 123456789 1 0 1 1 A CQ NC/72M A R/W BWS 1 K NC/14 4M LD A NC/36M CQ B NC .
CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 Document Number: 001-15271 Rev . *B Page 6 of 26 Pin Definitions Pin Name IO Pin Descripti on DQ [x:0] Input Output- Synchronous Data Input Output Signals . Sampled on the rising edge of K and K clocks during valid write operations.
CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 Document Number: 001-15271 Rev . *B Page 7 of 26 CQ Output Clock CQ is Referenced with Respect to C . This is a free running clock and is synchronized to the input cl ock for output data (C) of the DDR-II.
CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 Document Number: 001-15271 Rev . *B Page 8 of 26 Functional Overview The CY7C1316JV18, CY7C191 6JV18, CY7C1318JV18, and CY7C1320JV18 are synchronous pipelined Burst SRAMs equipped with a DDR interface, which operates with a read latency of one and half cycles when DOFF pin is tied HIGH.
CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 Document Number: 001-15271 Rev . *B Page 9 of 26 driver impedance. The value of RQ must be 5x the value of th e intended line impedance d riven by the SRAM. The allo wable range of RQ to guarantee impe dance matching with a to lerance of ±15% is between 175 Ω an d 350 Ω , with V DD Q =1 .
CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 Document Number: 001-15271 Rev . *B Page 10 of 26 T ruth T able The truth table for the CY7C1316JV18, CY7C1 916JV1 8, CY7C1318JV18, and CY7C1320JV18 follow s.
CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 Document Number: 001-15271 Rev . *B Page 1 1 of 26 Write Cycle Descriptions The write cycle description tabl e for CY7C1916JV18 follows. [2, 8] BWS 0 K K Comments L L–H – During the Data portion of a write sequence, the single byte (D [8:0] ) is written int o the de vi ce .
CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 Document Number: 001-15271 Rev . *B Page 12 of 26 IEEE 1 149.1 Serial Boundary Scan (JT AG) These SRAMs incorporate a serial boundary scan T est Access Port (T AP) in the FBGA p ackage. This part is fully comp liant with IEEE S tandard #1 149.
CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 Document Number: 001-15271 Rev . *B Page 13 of 26 IDCODE The IDCODE instruction loads a vendor-specific, 32-bi t code into the instruction re gister .
CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 Document Number: 001-15271 Rev . *B Page 14 of 26 T AP Controller St ate Diag ram The state diagram for the T AP controller follows.
CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 Document Number: 001-15271 Rev . *B Page 15 of 26 T AP Controller Block Diagram T AP Electrical Characteristics Over the Operating Range [10, 1 1, 12] Parameter Description T est Conditions Min Max Unit V OH1 Output HIGH V oltage I OH = − 2.
CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 Document Number: 001-15271 Rev . *B Page 16 of 26 T AP AC Switching Characteristics Over the Operating Range [13, 14] Parameter Description Min Ma.
CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 Document Number: 001-15271 Rev . *B Page 17 of 26 Identification R egi ster Definitions Instruction Field Va l u e Descriptio n CY7C1316JV18 CY7C1916JV18 CY7C1 318JV18 CY7C1320JV18 Revision Numb er (31:29) 001 001 001 001 V ersion number .
CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 Document Number: 001-15271 Rev . *B Page 18 of 26 Boundary Scan Order Bit # Bump ID Bit # Bump ID Bit # Bump ID Bit # Bump ID 0 6R 28 10G 56 6A 84.
CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 Document Number: 001-15271 Rev . *B Page 19 of 26 Power Up Sequence in DDR-II SRAM DDR-II SRAMs must be power ed up and initialized in a predefined manner to prevent unde fined operations. During power up, when th e DOFF is tied H IGH, the DLL is locked a fter 1024 cycles of st able clock.
CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 Document Number: 001-15271 Rev . *B Page 20 of 26 Maximum Ratings Exceeding maximum ratings may shorte n the battery life of the device. User guidelines are not te ste d. S torage T emperature ....
CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 Document Number: 001-15271 Rev . *B Page 21 of 26 Cap acit ance T ested initially and after any design or process change that may affect these parameters. Parameter Description T est Conditions Max Unit C IN Input Capacitance T A = 25 ° C, f = 1 MHz, V DD = 1.
CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 Document Number: 001-15271 Rev . *B Page 22 of 26 Switching Characteristics Over the Operating Range [19] Cypress Parameter Consor tium Parameter Description 300 MHz Unit Min Max t POWER V DD (T ypical) to the first Access [20] 1– m s t CYC t KHKH K Clock and C Clock Cycle Time 3.
CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 Document Number: 001-15271 Rev . *B Page 23 of 26 Switching W aveforms Figure 3. Read/Write/Deselect Sequence [2 4, 25, 26 ] READ READ READ NOP NO.
CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 Document Number: 001-15271 Rev . *B Page 24 of 26 Ordering Information Not all of the speed, package and temperature ranges are ava ilable. Please contact your local sales representative or visit www .
CY7C1316JV18, CY7C1916JV18 CY7C1318JV18, CY7C1320JV18 Document Number: 001-15271 Rev . *B Page 25 of 26 Package Diagram Figure 4. 165-ball FBGA (13 x 15 x 1.40 mm), 51-85180 A 1 PIN 1 CORNER 15.00±0.10 13.00±0.10 7.00 1.00 Ø0.50 (165X) Ø 0 . 2 5MCAB Ø0.
Document Number: 001-15271 Rev . *B Revised March 10, 2008 Page 26 of 26 QDR RAMs an d Quad Data Rate RAMs comp rise a new family of product s develope d by Cypress, IDT , NEC, Renesas, and Samsung. All pr oduct and co mpany nam es mentioned i n this documen t are the tr ad emarks of their respe ctive hold ers.
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