Cypress SemiconductorメーカーPerform CY7C1413BV18の使用説明書/サービス説明書
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36-Mbit QDR™-II SRAM 4-W ord Burst Architecture CY7C141 1BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18 Cypress Semiconductor Corpora tion • 198 Champion Court • San Jose , CA 95134-1709 • 408-943-2600 Document Number: 001-07037 Rev .
CY7C141 1BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18 Document Number: 001-07037 Rev . *D Page 2 of 30 Logic Block Diagra m (CY7C141 1BV18) Logic Block Diagram (CY7C1426BV18) 1M x 8 Array CLK A (19:0) Gen. K K Control Logic Address Register D [7:0] Read Add.
CY7C141 1BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18 Document Number: 001-07037 Rev . *D Page 3 of 30 Logic Block Diagram (CY7C1413BV18) Logic Block Diagram (CY7C1415BV18) CLK A (18:0) Gen. K K Control Logic Address Register D [17:0] Read Add. Decode Read Data Reg.
CY7C141 1BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18 Document Number: 001-07037 Rev . *D Page 4 of 30 Pin Configuration The pin configuration for CY7C141 1BV18, CY7C 1426BV18, CY7C141 3BV18, and CY7C1415BV18 follow . [1] 165-Ball FBGA (15 x 17 x 1 .
CY7C141 1BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18 Document Number: 001-07037 Rev . *D Page 5 of 30 CY7C1413BV18 (2M x 18) 123456789 10 11 A CQ NC/144M A WPS BWS 1 K NC/288M RPS A NC/72M CQ B NC Q.
CY7C141 1BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18 Document Number: 001-07037 Rev . *D Page 6 of 30 Pin Definitions Pin Name IO Pin Description D [x:0] Input- Synchronous Data Input Signals . Sampled on the rising edge of K and K clocks when valid write operations are active.
CY7C141 1BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18 Document Number: 001-07037 Rev . *D Page 7 of 30 CQ Echo Clock CQ Referenced with Respect to C . This is a free running clock and is synchronized to the input clock for output data (C) of the QDR-II.
CY7C141 1BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18 Document Number: 001-07037 Rev . *D Page 8 of 30 Functional Overview The CY7C141 1BV18, CY7C1426BV18, CY7C1413BV18 an d CY7C1415BV18 are synchrono us pipelined burst SRAMs with a read port and a write port.
CY7C141 1BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18 Document Number: 001-07037 Rev . *D Page 9 of 30 includes forwarding data from a write cycle that was initiated on the previous K clock rise. Read accesses and w rite access must be scheduled such that one transaction is initiated on an y clock cycle.
CY7C141 1BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18 Document Number: 001-07037 Rev . *D Page 10 of 30 T ruth T able The truth table for CY7C141 1BV18, CY7C1426 BV18, CY7C1413BV18, and CY7C1415BV18 follo ws.
CY7C141 1BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18 Document Number: 001-07037 Rev . *D Page 1 1 of 30 Write Cycle Descriptions The write cycle description tabl e for CY7C1426BV18 follows. [2, 10] BWS 0 K K Comments L L–H – During the Data portion of a write sequence, the single byte (D [8:0] ) is writ te n in to the device.
CY7C141 1BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18 Document Number: 001-07037 Rev . *D Page 12 of 30 IEEE 1 149.1 Serial Boundary Scan (JT AG) These SRAMs incorporate a serial boundary scan T est Access Port (T AP) in the FBGA p ackage. This part is fully comp liant with IEEE S tandard #1 149.
CY7C141 1BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18 Document Number: 001-07037 Rev . *D Page 13 of 30 IDCODE The IDCODE instruction loads a vendor-specific, 32-bi t code into the instruction re gister .
CY7C141 1BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18 Document Number: 001-07037 Rev . *D Page 14 of 30 T AP Controller S t ate Diag ram The state diagram for the T AP controller follows.
CY7C141 1BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18 Document Number: 001-07037 Rev . *D Page 15 of 30 T AP Controller Block Diagram T AP Elect ri cal Characteristics Over the Operating Range [12, 13, 14] Parameter Description T est Conditions Min Max Unit V OH1 Output HIGH V oltage I OH = − 2.
CY7C141 1BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18 Document Number: 001-07037 Rev . *D Page 16 of 30 T AP AC Switching Characteristics Over the Operating Range [15, 16] Parameter Description Min M.
CY7C141 1BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18 Document Number: 001-07037 Rev . *D Page 17 of 30 Identification R egi ster Definitions Instruction Field Va l u e Descriptio n CY7C141 1BV18 CY7C1426BV18 CY7C1413BV18 C Y7C1415BV18 Revision Numb er (31:29) 000 000 000 000 V ersion number .
CY7C141 1BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18 Document Number: 001-07037 Rev . *D Page 18 of 30 Boundary Scan Order Bit # Bump ID Bit # Bump ID Bit # Bump ID Bit # Bump ID 0 6R 28 10G 56 6A 8.
CY7C141 1BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18 Document Number: 001-07037 Rev . *D Page 19 of 30 Power Up Sequence in QDR-II SRAM QDR-II SRAMs must be powered up and initialized in a predefined manner to prevent unde fined operations. Power Up Sequence ■ Apply power and drive DO FF either HIGH or LOW (All other inputs can be HIGH or LOW).
CY7C141 1BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18 Document Number: 001-07037 Rev . *D Page 20 of 30 Maximum Ratings Exceeding maximum ratin gs may impair the useful life o f the device. These user guidelines are not teste d. S torage T emperature .
CY7C141 1BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18 Document Number: 001-07037 Rev . *D Page 21 of 30 I DD [21] V DD Operating Supply V DD = M ax, I OUT = 0 mA, f = f MAX = 1/t CYC 200MHz (x8) 620 .
CY7C141 1BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18 Document Number: 001-07037 Rev . *D Page 22 of 30 Cap acit ance T ested initially and after any design or process change that may affect these p arameters. Parameter Description T est Conditions Max Unit C IN Input Capacitance T A = 25 ° C, f = 1 MHz, V DD = 1.
CY7C141 1BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18 Document Number: 001-07037 Rev . *D Page 23 of 30 Switching Characteristics Over the Operating Range [22, 23] Cypress Parameter Consor tium Param.
CY7C141 1BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18 Document Number: 001-07037 Rev . *D Page 24 of 30 Output T imes t CO t CHQV C/C Clock Rise (or K/K in single clock mode) to Data V alid – 0.45 – 0.45 – 0.45 – 0.45 – 0.50 ns t DOH t CHQX Data Output Hold af ter Output C/C Clock Rise (Active to Active) –0.
CY7C141 1BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18 Document Number: 001-07037 Rev . *D Page 25 of 30 Switching W aveforms Figure 5. Read/Write/Deselect Sequence [2 9, 30, 31 ] K 1 2 34 5 6 7 RPS W.
CY7C141 1BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18 Document Number: 001-07037 Rev . *D Page 26 of 30 Ordering Information Not all of the speed, package and temperature ranges are ava ilable. Please contact your local sales representative or visit www .
CY7C141 1BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18 Document Number: 001-07037 Rev . *D Page 27 of 30 250 CY7C141 1BV18-250BZC 51-85195 165-Ball Fine Pi tch Ball Grid Array (15 x 17 x 1.4 mm) Commercial CY7C1426BV18-250BZC CY7C1413BV18-250BZC CY7C1415BV18-250BZC CY7C141 1 BV18-250BZXC 51-85195 1 65-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.
CY7C141 1BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18 Document Number: 001-07037 Rev . *D Page 28 of 30 167 CY7C141 1BV18-167BZC 51-85195 165-Ball Fine Pi tch Ball Grid Array (15 x 17 x 1.4 mm) Commercial CY7C1426BV18-167BZC CY7C1413BV18-167BZC CY7C1415BV18-167BZC CY7C141 1 BV18-167BZXC 51-85195 1 65-Ball Fine Pitch Ball Grid Array (15 x 17 x 1.
CY7C141 1BV18, CY7C1426BV18 CY7C1413BV18, CY7C1415BV18 Document Number: 001-07037 Rev . *D Page 29 of 30 Package Diagram Figure 6. 165-ball FBGA (15 x 17 x 1.
Document Number: 001-07037 Rev . *D Revised June 16, 2008 Page 30 of 30 QDR RAMs an d Quad Data Rate RAMs comp rise a new family of product s developed by Cypress, I DT , NEC, Renesas, and Sa msung. All pr oduct and co mpany names mentioned in this documen t are the tr ad emarks of their respe ctive hold er s.
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